Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...

Researchers from Cambridge University's Microelectronics Research Centre and Hitachi Cambridge Laboratory made progress on building a single-electron memory in CMOS. The group has put together a 3 X 3 ...

Santa Clara, Calif. – February 7, 2012 – Kilopass Technology Inc., a leading provider of logic non-volatile memory (NVM) intellectual property (IP), today announced that its XPM embedded one-time ...

(1) A small, battery-backed memory bank in a computer that holds configuration settings. See BIOS setup. THIS DEFINITION IS FOR PERSONAL USE ONLY. All other reproduction requires permission.

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...

Crossbar has shed light on its RRAM (Resistive RAM) technology intended to significantly boost capacity and performance of standalone and embedded memory. According to the company, the new approach ...

As we enter the era of superintelligence and hyper-connected Fourth Industrial Revolution, the importance of high-density and high-performance memory is greater than ever. Currently, the most widely ...

Practically since its founding over eight years ago, Automation World has covered the technology and applications of the connected world, now dubbed the “Internet ...

Non-volatile bistable memory circuits pave the way for highly energy-efficient CMOS logic systems. Non-volatile bistable memory circuits being developed by Satoshi Sugahara and his team at Tokyo Tech ...

The AEFuse embedded, nonvolatile memory cores include what is said to be the first multiple-times-programmable (MTP) fuse fabricated in standard 0.25 µm and 0.18 µm CMOS processes. Offered as a ...