NMOS在实际应用中为何比PMOS要更受欢迎,本文将从导电沟道、电子迁移率和器件速度等多个方面来展开讲解。 首先是在性能 ...
在性能相当的条件下,一颗 PMOS 管的器件面积通常需要达到 NMOS 管的 2~3 倍。更大的面积不仅影响芯片的集成度,也会带来更高的导通电阻和输入输出电容,进而增加电路延迟。 与此同时,若尺寸相同,PMOS 的沟道导通电阻一般大于 NMOS,因此其开关过程中的导通 ...
Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...
KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...
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