Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...

Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability ...

WEST LAFAYETTE, Ind. – Researchers have demonstrated the high-performance potential of an experimental transistor made of a semiconductor called beta gallium oxide, which could bring new ...

For decades, the industry has relied on various power semiconductors to control and convert electrical power in an efficient manner. Power semis are ubiquitous, as they are found in adapters, ...

Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

This resource provides clear explanations of how switching regulators work and how voltage boosting is achieved efficiently ...