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Abstract: Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an ...

Abstract: The leakage of pixel is a significant index to characterize quality of CMOS image sensor (CIS), which is classified into white pixel (WP) and dark current (DC) in the yield test. It is ...