Abstract: We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to ...

Abstract: We propose and study numerically a new deep ridge InGaAlAs/InP multi-quantum well (MQW) transistor lasers (TL), in which an n-doped InAlAs layer is inserted below the MQW layer in the device ...

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