Abstract: This paper proposes a 200V all-SiC integration process platform integrating low-voltage (LV) and high-voltage (HV) devices, such as LV NMOS, LV PMOS, resistor, capacitor, HV LDMOS, and HV ...

Abstract: This article presents observations of silicon carbide (SiC) damage related to single-event gate oxide damage in SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) subjected to ...

Hodey is a published writer based out of the Rocky Mountains. He's had a passion for video games and literature since he was a child growing up along the beaches of California. With a graduate degree ...